• Title of article

    The influences of preparation parameters on NiO thin film properties for gas-sensing application

  • Author/Authors

    Hotovy، نويسنده , , I. and Huran، نويسنده , , J. and Siciliano، نويسنده , , P. and Capone، نويسنده , , S. and Spiess، نويسنده , , L. and Rehacek، نويسنده , , V.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    7
  • From page
    126
  • To page
    132
  • Abstract
    Nickel oxide (NiO) thin films have been prepared by dc reactive magnetron sputtering from a metallic Ni target in an Ar+O2 mixed atmosphere in two sputtering modes. The oxygen content in the gas mixture varied from 15 to 45%. Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscope (XPS) investigations have been used for the study of the chemical composition and to detect different chemical states of bond elements. TEM observations revealed a dense fine-grained structure with the grain size in the range 4–10 nm. Atomic force microscopy (AFM) showed that the surface morphology NiO films can be modified by the process parameters as the oxygen content and the pumping speed. Scanning electron microscope (SEM) observation and energy dispersive X-ray (EDX) analyses revealed uniform morphology and homogenous dispersion of NiO, Pt and Al2O3 phases. In addition, the NiO thin films were tested in order to investigate their response to CO in the range 50–200 ppm at different operating temperatures.
  • Keywords
    Nickel oxide , Gas sensors , CARBON MONOXIDE , Thin films
  • Journal title
    Sensors and Actuators B: Chemical
  • Serial Year
    2001
  • Journal title
    Sensors and Actuators B: Chemical
  • Record number

    1415358