• Title of article

    Some experiments on the scratching of silicon:: In situ scratching inside an SEM and scratching under high external hydrostatic pressures

  • Author/Authors

    Yoshino، نويسنده , , M and Aoki، نويسنده , , T and Shirakashi، نويسنده , , T and Komanduri، نويسنده , , R، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2001
  • Pages
    13
  • From page
    335
  • To page
    347
  • Abstract
    To elucidate the mechanisms of material removal in ultra precision machining of silicon involving deformation and fracture, in situ scratching of silicon with a diamond stylus inside a scanning electron microscope (SEM) using a specially designed tribometer and scratching under zero and high (400 MPa) external hydrostatic pressures using a specially designed high-pressure machining apparatus were conducted. The resulting scratches were examined in an SEM to evaluate the influence of depth of cut and hydrostatic pressure on the nature of scratches produced (smooth versus fractured surfaces) and the possible brittle–ductile transition. Experimental results indicate that hydrostatic pressure plays an important role in minimizing fracture and producing smooth surfaces. Reasonable agreement of the experimental results with the meso-plasticity FEM simulation of indentation was obtained.
  • Journal title
    International Journal of Mechanical Sciences
  • Serial Year
    2001
  • Journal title
    International Journal of Mechanical Sciences
  • Record number

    1418176