Title of article
Some experiments on the scratching of silicon:: In situ scratching inside an SEM and scratching under high external hydrostatic pressures
Author/Authors
Yoshino، نويسنده , , M and Aoki، نويسنده , , T and Shirakashi، نويسنده , , T and Komanduri، نويسنده , , R، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2001
Pages
13
From page
335
To page
347
Abstract
To elucidate the mechanisms of material removal in ultra precision machining of silicon involving deformation and fracture, in situ scratching of silicon with a diamond stylus inside a scanning electron microscope (SEM) using a specially designed tribometer and scratching under zero and high (400 MPa) external hydrostatic pressures using a specially designed high-pressure machining apparatus were conducted. The resulting scratches were examined in an SEM to evaluate the influence of depth of cut and hydrostatic pressure on the nature of scratches produced (smooth versus fractured surfaces) and the possible brittle–ductile transition. Experimental results indicate that hydrostatic pressure plays an important role in minimizing fracture and producing smooth surfaces. Reasonable agreement of the experimental results with the meso-plasticity FEM simulation of indentation was obtained.
Journal title
International Journal of Mechanical Sciences
Serial Year
2001
Journal title
International Journal of Mechanical Sciences
Record number
1418176
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