Author/Authors :
Chang، نويسنده , , Kuan-Chang and Chen، نويسنده , , Jung-Hui and Tsai، نويسنده , , Tsung-Ming and Chang، نويسنده , , Ting-Chang and Huang، نويسنده , , Syuan-Yong and Zhang، نويسنده , , Rui and Chen، نويسنده , , Kai-Huang and Syu، نويسنده , , Yong-En and Chang، نويسنده , , Geng-Wei and Chu، نويسنده , , Tian-Jian and Liu، نويسنده , , Guan-Ru and Su، نويسنده , , Yu-Ting and Chen، نويسنده , , Min-Chen and Pan، نويسنده , , Jhih-Hong and Liao، نويسنده , , Kuo-Hsiao and Tai، نويسنده , , Ya-Hsiang and Young، نويسنده , , Tai-Fa and Sze، نويسنده , , Simon M. and Ai، نويسنده , , Chi-Fong and Wang، نويسنده , , Min-Chuan and Huang، نويسنده , , Jen-Wei، نويسنده ,
Abstract :
We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydration–dehydration reaction through supercritical CO2 fluid treatment, which was verified by the XPS and FTIR analyses. The current conduction mechanism of low resistance state in post-treated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction. Furthermore, the current conduction mechanism of high resistance state in the memory device was transferred to Schottky emission from Frenkel–Poole conduction. The phenomena were attributed to the discontinuous metal filament formed by hydration–dehydration reaction in Sn:SiOx thin film through supercritical fluid treatment. Finally, a reaction model was proposed to explain the mechanism of current reduction in Sn:SiOx thin film with supercritical CO2 fluid treatment.
Keywords :
RRAM , Tin doping , Hydration–dehydration reaction , Supercritical fluid
