Author/Authors :
Rahman، نويسنده , , Md H. and Thakur، نويسنده , , Jagdish S. and Rimai، نويسنده , , Lajos and Perooly، نويسنده , , Soma and Naik، نويسنده , , Ratna and Zhang، نويسنده , , Linfeng and Auner، نويسنده , , Gregory W. and Newaz، نويسنده , , Golam، نويسنده ,
Abstract :
The electrical response of a hydrogen-sensing device is either a rectifying diode-type or a capacitor-type but could not be operated simultaneously in both the modes. However, we are able to demonstrate that a Pd/AlN/SiC device can operate in dual mode either as a rectifying diode or a capacitor. The device with a 50 nm AlN layer shows a shift of ∼0.35 V for 100 ppm H2 in both the modes, at a temperature of 150 °C. It seems that the presence of donor levels in the bandgap of the AlN layer with a wide range of energy is responsible for the observed electrical behavior of this device.
Keywords :
Pd/AlN/SiC device , Dual mode either as a rectifying diode or a capacitor , Hydrogen sensor , Dual-mode operation
