Author/Authors :
Korotcenkov، نويسنده , , G. and Boris، نويسنده , , I. and Cornet، نويسنده , , A. and Rodriguez، نويسنده , , J. and Cirera، نويسنده , , A. I. Golovanov and S. N. Bobrov ، نويسنده , , V. and Lychkovsky، نويسنده , , Yu. and Karkotsky، نويسنده , , G.، نويسنده ,
Abstract :
In this paper the influence of additives on gas response of In2O3-based one-electrode sensors is discussed. The analysis of Raman scattering of doped In2O3 ceramics was carried out, and the mechanism of doping influence on In2O3 grain structure is suggested. It is concluded that the appearance of the second phase in In2O3-based ceramics is the main factor controlling the change of gas sensing characteristics.
Keywords :
In2O3 , Improvement , Doping , Raman spectroscopy , Chemical composition , Gas response
