Title of article :
Analysis of response mechanism of a proton-pumping gate FET hydrogen gas sensor in air
Author/Authors :
Yamaguchi، نويسنده , , T. and Takisawa، نويسنده , , M. and Kiwa، نويسنده , , T. and Yamada، نويسنده , , H. and Tsukada، نويسنده , , K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
5
From page :
538
To page :
542
Abstract :
Two different types of hydrogen response signals (DC and AC) of a proton-pumping gate FET with triple layer gate structure (Pd/proton conducting polymer/Pt) were obtained. The proton-pumping gate FET showed good selectivity against other gases (CH4, C2H6, NH3, and O2). For practical use, the hydrogen response characteristics of the proton-pumping gate FET were investigated in air (a gaseous mixture of oxygen and nitrogen). The proton-pumping gate FET showed different hydrogen response characteristics in nitrogen as well as in air, despite the lack of oxygen interference independently. To clarify the response mechanism of the proton-pumping gate FET, a hydrogen response measurement was performed, using a gas flow system and electrochemical impedance spectroscopy. Consequently, the difference in response between nitrogen and air was found to be due to the hydrogen dissociation reaction and the interference with the proton transfer caused by the adsorbed oxygen on the upper Pd gate electrode.
Keywords :
Proton-pumping gate , Oxygen , Hydrogen sensor , Field effect transistor (FET) , Electrochemical impedance spectroscopy (EIS)
Journal title :
Sensors and Actuators B: Chemical
Serial Year :
2008
Journal title :
Sensors and Actuators B: Chemical
Record number :
1436413
Link To Document :
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