Title of article
Advances of SiC-based MOS capacitor hydrogen sensors for harsh environment applications
Author/Authors
Soo، نويسنده , , Mun Teng and Cheong، نويسنده , , Kuan Yew and Noor، نويسنده , , Ahmad Fauzi Mohd Noor، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
17
From page
39
To page
55
Abstract
SiC-based hydrogen sensors have attracted much attention due to applications in harsh environments. In this paper, harsh environment is defined. Characteristics of SiC-based hydrogen sensors for harsh environment applications are reviewed. Various types of SiC-based field effect hydrogen sensor in terms of their respective history, structure, advantages and disadvantages have been discussed. SiC-based MOS capacitor hydrogen sensor will be conferred in detail. The reasons for selecting SiC in fabricating MOS capacitor hydrogen sensor for harsh environment applications are elucidated. Different hydrogen sensing mechanisms depend on the temperatures and the conditions of catalytic metal layer are highlighted. MOS capacitor SiC-based sensors fabricated by previous research groups are listed. Each catalytic electrodes and oxide layers selected have their significant properties. Examples of nanostructured materials that have been used in forming oxide layer are illustrated. The future challenges in terms of material (metal electrodes and oxide layers) properties and surface properties of materials are described. It is concluded that MOS capacitor SiC-based hydrogen sensors promote green technology.
Keywords
Hydrogen sensor , Metal electrode , Dielectric layer , Harsh environment , silicon carbide (SiC) , MOS capacitor
Journal title
Sensors and Actuators B: Chemical
Serial Year
2010
Journal title
Sensors and Actuators B: Chemical
Record number
1438772
Link To Document