Electrical and ferroelectric properties of SBT thin films formed by photochemical metal-organic deposition

The electrical and ferroelectric properties of SBT thin films prepared by photochemical metal-organic deposition using photosensitive starting precursors were characterized. Fourier transform infra-red spectroscopic observation showed that a complete removal of organic groups was possible by UV exposure of spin-coated SBT precursor film at room temperature. The values of measured remnant polarization and leakage current density at 400 kV/cm were 5.8 μC/cm2 and 3.48 × 10−8 A/cm2 after anneal treatment at 700 °C of the UV-exposed SBT precursor film and 10.8 μC/cm2 and 6.94 × 10−8 A/cm2 after anneal treatment at 750 °C. The SBT films annealed at 700 and 750 °C remained fatigue-free up to 1010 switching cycles.