Title of article :
Growth and gas sensing characteristics of p- and n-type ZnO nanostructures
Author/Authors :
Ramgir، نويسنده , , N.S. and Ghosh، نويسنده , , M. and Veerender، نويسنده , , P. and Datta، نويسنده , , N. and Kaur، نويسنده , , M. and Aswal، نويسنده , , D.K. Das-Gupta، نويسنده , , S.K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
6
From page :
875
To page :
880
Abstract :
ZnO nanoparticles (NPs) of 5–15 nm size and nanowires (NWs) of 50–100 nm dia., exhibiting p and n-type characteristics, respectively, have been synthesized using simple chemical process. ZnO NW-films exhibited good sensitivity and selectivity towards H2S in ppm range with fast response and recovery times. Interestingly, ZnO NP-films showed p-type conductivity that has been obtained for the first time without intentional doping while NW-films showed n-type conduction as has also been reported in various earlier studies. The p- and n-type conductivities in NP- and NW-films have been confirmed using hot probe and Kelvin probe measurements. The n-type behavior of NW-films is attributed to oxygen vacancies, whereas the p-type nature of NP-films is attributed to the zinc vacancy, surface acceptor levels created by the adsorbed oxygen and/or the unintentional carbon doping in ZnO.
Keywords :
Gas sensor , p-type semiconductor , ZNO , Nanoparticles , nanowires , H2S
Journal title :
Sensors and Actuators B: Chemical
Serial Year :
2011
Journal title :
Sensors and Actuators B: Chemical
Record number :
1439526
Link To Document :
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