Title of article
Vapour sensing properties of InP quantum dot luminescence
Author/Authors
De Angelis، نويسنده , , R. and Casalboni، نويسنده , , M. and Hatami، نويسنده , , F. and Ugur، نويسنده , , A. and Masselink، نويسنده , , W.T. and Prosposito، نويسنده , , P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
4
From page
149
To page
152
Abstract
We investigated uncapped InP quantum dots grown epitaxially on InGaP buffer layer as an optically active element for chemical vapour detection. Near infrared luminescence has been studied as a function of the external environment. QD luminescence intensity changes rapidly and reversibly on exposure to methanol vapour while its spectral shape remains unchanged. For QDs about 45 nm average lateral size and 4–6 nm height, sensitivity to methanol vapour in the range 3.3 × 104–7.2 × 103 ppm has been demonstrated.
Keywords
Vapour sensitivity , InP quantum dots , Methanol , Photoluminescence
Journal title
Sensors and Actuators B: Chemical
Serial Year
2012
Journal title
Sensors and Actuators B: Chemical
Record number
1440386
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