UV light-enhanced NO2 sensing by mesoporous In2O3: Interpretation of results by a new sensing model

The light-enhanced NO2 sensing behavior of mesoporous In2O3 is measured and interpreted by means of a new sensing model. The model aims at explaining (i) the drop in electronic resistance of n-type semiconducting In2O3 under UV light exposure, (ii) the light-enhanced reaction to oxidizing gases, and (iii) the faster reaction and regeneration in mesoporous In2O3 as compared to non-porous material. Contrary to the conventional double Schottky model the dominating factor for the change in resistance is a change of oxygen vacancy donor states (0.18 eV below the conduction band) in the bulk phase due to photoreduction, instead of chemisorption. For the faster reaction and regeneration we propose an explanation based on enhanced oxygen diffusion in the In2O3 crystal lattice, specifically dominant in the mesoporous structure. The response of ordered mesoporous In2O3 to NO2 is stronger than in case of unstructured bulk material (with an average grain size of ca. 40 nm). The reaction is significantly accelerated by illuminating the samples with UV light. However, the response of the mesoporous material is weaker in the illuminated case.