Title of article :
Voltammetry and in situ scanning tunnelling microscopy of de novo designed heme protein monolayers on Au(111)-electrode surfaces
Author/Authors :
Albrecht، نويسنده , , Tim and Li، نويسنده , , Wen-Wu and Haehnel، نويسنده , , Wolfgang and Hildebrandt، نويسنده , , Peter and Ulstrup، نويسنده , , Jens، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
8
From page :
193
To page :
200
Abstract :
In the present work, we report the electrochemical characterization and in situ scanning tunnelling microscopy (STM) studies of monolayers of an artificial de novo designed heme protein MOP-C, covalently immobilized on modified Au(111) surfaces. otein forms closely packed monolayers, which remain electroactive upon immobilization. In situ STM images show circular structures indicating that MOP-C stands upright on the surface in accordance with the molecular design. Despite the large spatial extension of MOP-C, about 5 nm in height, conditions could be found where tip/sample interaction is minimal and proteins could be imaged without detectable tip interference. sults indicate further that the structural sensitivity of (in situ) STM depends to a significant extent on associated electron transfer kinetics. In the present case, the heme group does not contribute significantly to the tunnelling current, apparently due to slow electron transfer kinetics. As a consequence, STM images of heme-containing and heme-free MOP-C did not reveal any notable differences in apparent height or physical extension. The apparent height of heme-containing MOP-C did not show any dependence on the substrate potential being varied around the redox potential of the protein. The mere presence of an accessible molecular energy level is not sufficient to result in detectable tunnelling current modulation.
Keywords :
Electrochemical STM , Artificial protein , de novo design , Single-crystal electrochemistry
Journal title :
Bioelectrochemistry
Serial Year :
2006
Journal title :
Bioelectrochemistry
Record number :
1451555
Link To Document :
بازگشت