Title of article
A study on Sn ion implantation into lead telluride thermoelectric material
Author/Authors
Shen، نويسنده , , Qiang and Li، نويسنده , , Junguo and Zhang، نويسنده , , Lianmeng، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
167
To page
172
Abstract
Polycrystalline PbTe samples have been implanted by Sn+ ion at an energy of 200 KeV with doses of 6×1016 and 1×1017 ions/cm2 in order to create a Pb1−xSnxTe layer with higher carrier concentration. The thermoelectric properties of the implanted and unimplanted samples have been measured at room temperature. The effects of Sn+ ion implantation on the structure of PbTe were investigated using XRD and XPS. The results show that Pb1−xSnxTe phase has been created in the surface layer after Sn+ ion implantation, which can modify the thermoelectric properties of PbTe.
Keywords
Ion implantation , Thermoelectric property , PbTe
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2000
Journal title
Solar Energy Materials and Solar Cells
Record number
1476433
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