Influence of hydrogen dilution on low-temperature polycrystalline silicon formation using RF excitation SiH4/H2 plasma

The effect of hydrogen dilution was investigated on polycrystalline silicon formation using radio frequency excitation SiH4/ H2 plasma. The hydrogen dilution reduces the growth rate of the a-Si : H films. The dark conductivity of the a-Si : H films increases with increasing H2 dilution. The dark conductivity of the poly-Si films formed by recrystallization annealing of the a-Si : H film decrease with H2 dilution. The grain size, with X-ray diffraction spectroscopy and scanning electron microscopy images of the poly-Si films, is in reverse ratio to the H2 dilution.