Boron ion implantation effects in C60 films

An attempt has been made on the device fabrication with boron ion implanted C60 thin films. The C60 thin films evaporated on n-type Si (1 0 0) have been implanted with mass analyzed positive boron ions at a fixed energy of 80 keV to different doses in the range 1×1012−1×1015 ions/cm2. Raman scattering and FTIR studies of the high-dose implanted films reveal the formation of amorphous carbon layer. Hall effect measurements indicate the formation of p-type conductivity in C60 thin films with boron ion implantation. In order to realize uniform boron distribution in the C60 films, multiple boron implantation with energies in the range of 50–80 keV has been examined and p-type C60/n-type Si heterojunction solar cells with an efficiency as high as 0.023% have been fabricated. The photovoltaic properties of the solar cell structure are discussed along with the dark and illuminated I—V characteristics.