Title of article :
UVCVD silicon nitride passivation and ARC layers for multicrystalline solar cells
Author/Authors :
A. and Fourmond، نويسنده , , Erwann and Dennler، نويسنده , , Gilles and Monna، نويسنده , , Rémi and Lemiti، نويسنده , , Mustapha and Fave، نويسنده , , Alain and Laugier، نويسنده , , André، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
This work intends to investigate the effectiveness of silicon nitride layers (SiNx : H) deposited by photochemical vapor deposition (UVCVD) for antireflection and passivation purposes when applied to electromagnetically casted silicon solar cells (EMC). Effective reflectivity of 10.8% is achieved, as well as 66% increase of minority carrier lifetime.
Keywords :
Multicrystaline solar cell , Silicon nitride , EMC , UVCVD
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells
