Author/Authors :
Bilyalov، نويسنده , , R and Stalmans، نويسنده , , L and Beaucarne، نويسنده , , G and Loo، نويسنده , , R and Caymax، نويسنده , , M and Poortmans، نويسنده , , J and Nijs، نويسنده , , J، نويسنده ,
Abstract :
The potential of porous silicon (PS) with dual porosity structure as an intermediate layer for ultra-thin film solar cells is described. It is shown that a double-layered PS with a porosity of 2060% allows to grow epitaxial Si film at medium temperature (725°–800°C) and at the same time serves as a gettering/diffusion barrier for impurities from potentially contaminated low-cost substrate. A 3.5 μm thin-film cell with reasonable efficiency is realized using such a PS intermediate layer.
