Title of article
Effect of high temperature steam annealing for SiO2 passivation
Author/Authors
Abe، نويسنده , , Y and Nagayoshi، نويسنده , , Kouji Kawaba، نويسنده , , T and Arai، نويسنده , , N and Saitoh، نويسنده , , T and Kamisako، نويسنده , , K، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
607
To page
612
Abstract
We introduced high-temperature steam annealing (HSA) as a low-cost and effective post-annealing method for c-Si solar cell processing. The annealing effects were analyzed by measuring effective lifetime and C–V characteristics and were compared with the effects of forming gas annealing (FGA) and hydrogen-radical annealing (HRA). By using this method, effective lifetime of a SiO2-coated wafer was increased in a very short annealing time compared to the conventional FGA. It was determined that the improvement of lifetime by HSA can be attributed to the decrease of interface state density.
Keywords
SiO2 passivation , High temperature steam annealing , Post-annealing , Hydrogen-radical annealing
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1476937
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