Spatial distribution of high-density microwave plasma for fast deposition of microcrystalline silicon film

The high-density microwave plasma utilizing a spokewise antenna was successfully applied to fast deposition of highly crystallized and photoconductive microcrystalline silicon (μc-Si:H) film at low temperatures. Among various deposition parameters, spatial distribution of ion energy (IDF) mainly determines film crystallinity. The best crystallinity was obtained at the axial distance, Z from the quartz glass plate, where the spread of mean ion energy is minimum. By optimizing the axial distance, Z and total pressure, highly crystallized and photoconductive μc-Si:H film could be fabricated with a high deposition rate of 47 Å/s at ∼50 mTorr in SiH4 and Ar plasma.