Author/Authors :
Harada، نويسنده , , H and Yoshida، نويسنده , , N and Yamamoto، نويسنده , , K and Itoh، نويسنده , , T and Inagaki، نويسنده , , K and Inouchi، نويسنده , , H and Yamana، نويسنده , , N and Aoki، نويسنده , , T and Nonomura، نويسنده , , S and Nitta، نويسنده , , S، نويسنده ,
Abstract :
A new method, Hot-wire assisted PECVD, is proposed for preparing μc-Si:H films. This method is constructed of two parts, plasma-enhanced CVD (PECVD) and hot-wire for exciting hydrogen. Both the crystalline grain size and the volume fraction of Si crystallites in the film are improved by this preparation method compared with those of the conventional PECVD. The results obtained are interpreted by the enhanced hydrogen-radical density. The importance of control of H radicals is discussed for the growth of the crystallite.
