Title of article
Solar cell degradation by electron irradiation. Comparison between Si, GaAs and GaInP cells
Author/Authors
de Angelis، نويسنده , , N and Bourgoin، نويسنده , , J.C and Takamoto، نويسنده , , T and Khan، نويسنده , , A and Yamaguchi، نويسنده , , M، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
495
To page
500
Abstract
We monitor the short circuit current and the open circuit voltage of Si, GaAs and GaInP solar cells versus the fluence of 1 MeV electrons. From these data, we extract the fluence dependences of the lifetime and of the concentration of compensating centers. This allows to compare in detail the radiation hardness of cells made with these materials and to modelize their degradation under a given irradiation.
Keywords
GaInP , Defects , Irradiation , SI , GaAs
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1477137
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