Author/Authors :
Tonomura، نويسنده , , Yoshifumi and Hagino، نويسنده , , Masato and Washio، نويسنده , , Hidetoshi and Kaneiwa، نويسنده , , Minoru and Saga، نويسنده , , Tatsuo and Anzawa، نويسنده , , Osamu and Aoyama، نويسنده , , Kazuhiro and Shinozaki، نويسنده , , Koichi and Matsuda، نويسنده , , Sumio، نويسنده ,
Abstract :
This paper reports the recent results of improving the radiation hardness of silicon solar cells, which is SHARP and NASDAʹs project since 1998 (Tonomura et al., Second World Conference on Photovoltaic Solar Energy, 1998, pp. 3511–3514). Newly developed 2×2 cm2 Si solar cells with ultrathin substrates and both-side junction (BJ) structure showed 72.0 mW (13.3% efficiency) maximum output power at AM0, 28°C after 1 MeV electron irradiation up to 1×1015 e/cm2 and the best cell showed 72.5 mW (13.4%) maximum output power. These solar cells have p–n junctions at both front and rear surfaces and showed less radiation degradation and better remaining factor than previous solar cells.
