Characterization of Cu(In,Ga)Se2 thin films prepared by thermal crystallization on Mo/glass substrate

Thin films of Cu(In,Ga)Se2 were prepared by thermal crystallization on the sputtered Mo/substrate and characterized. MoSe2 layer was formed at the interface between Cu(In,Ga)Se2 and Mo layers after the thermal crystallization. The graded Ga concentration in crystallized Cu(In,Ga)Se2 thin films was confirmed. Cu(In,Ga)Se2 thin films prepared on the Mo/soda-lime glass had large and columnar grains rather than those on the Mo/quartz substrate.