Title of article
Characterization of Cu(In,Ga)Se2 thin films prepared by thermal crystallization on Mo/glass substrate
Author/Authors
Yamaguchi، نويسنده , , Toshiyuki and Yamamoto، نويسنده , , Yukio and Yoshida، نويسنده , , Akira، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
77
To page
82
Abstract
Thin films of Cu(In,Ga)Se2 were prepared by thermal crystallization on the sputtered Mo/substrate and characterized. MoSe2 layer was formed at the interface between Cu(In,Ga)Se2 and Mo layers after the thermal crystallization. The graded Ga concentration in crystallized Cu(In,Ga)Se2 thin films was confirmed. Cu(In,Ga)Se2 thin films prepared on the Mo/soda-lime glass had large and columnar grains rather than those on the Mo/quartz substrate.
Keywords
Thermal crystallization , Chalcopyrite , Cu(In , Ga)Se2 , MoSe2
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1477233
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