Title of article :
Theoretical analysis of the effect of conduction band offset of window/CIS layers on performance of CIS solar cells using device simulation
Author/Authors :
Minemoto، نويسنده , , Takashi and Matsui، نويسنده , , Takuya and Takakura، نويسنده , , Hideyuki and Hamakawa، نويسنده , , Yoshihiro and Negami، نويسنده , , Takayuki and Hashimoto، نويسنده , , Yasuhiro and Uenoyama، نويسنده , , Takeshi and Kitagawa، نويسنده , , Masatoshi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
One of the most important factors of CdS leading to high performance in Cu(In,Ga)Se2 (CIGS) solar cells is appropriation of the conduction band offset of CdS/CIGS layers. However, it is not clearly explained. In this study, device modeling and simulation were conducted to explain the effect of conduction band offset of window/CIGS layers on performance of CIGS solar cells. As a result of calculation, excellent performance can be obtained when the conduction band of window layer positions higher by 0–0.4 eV than that of CIGS.
Keywords :
Conduction band offset , CIGS , CDS , Window layer , Device modeling
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells
