Title of article
Theoretical analysis of the effect of conduction band offset of window/CIS layers on performance of CIS solar cells using device simulation
Author/Authors
Minemoto، نويسنده , , Takashi and Matsui، نويسنده , , Takuya and Takakura، نويسنده , , Hideyuki and Hamakawa، نويسنده , , Yoshihiro and Negami، نويسنده , , Takayuki and Hashimoto، نويسنده , , Yasuhiro and Uenoyama، نويسنده , , Takeshi and Kitagawa، نويسنده , , Masatoshi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
83
To page
88
Abstract
One of the most important factors of CdS leading to high performance in Cu(In,Ga)Se2 (CIGS) solar cells is appropriation of the conduction band offset of CdS/CIGS layers. However, it is not clearly explained. In this study, device modeling and simulation were conducted to explain the effect of conduction band offset of window/CIGS layers on performance of CIGS solar cells. As a result of calculation, excellent performance can be obtained when the conduction band of window layer positions higher by 0–0.4 eV than that of CIGS.
Keywords
Conduction band offset , CIGS , CDS , Window layer , Device modeling
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1477237
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