Author/Authors :
Siebentritt، نويسنده , , S and Bauknecht، نويسنده , , A and Gerhard، نويسنده , , U. Fiedeler، نويسنده , , U and Kampschulte، نويسنده , , T and Schuler، نويسنده , , Wolfgang Harneit، نويسنده , , W and Brehme، نويسنده , , S and Albert، نويسنده , , J and Lux-Steiner، نويسنده , , M.Ch، نويسنده ,
Abstract :
Metal organic vapor-phase epitaxy (MOVPE) is used to prepare epitaxial reference films and solar cells based on CuGaSe2. Room temperature Hall measurements are performed on epitaxial CuGaSe2. Conductivities up to 0.7 (Ω cm)−1 were obtained. Highest mobilities of 270 cm2/Vs are observed for near stoichiometric slightly Ga-rich films. Net charge carrier concentration is higher in the Cu-rich grown films than in the Ga-rich films. Solar cells with epitaxial absorber are prepared that reach efficiencies of 3.3%. First polycrystalline solar cells are grown on Mo/glass at reduced substrate temperatures. Under AM1.5 illumination open-circuit voltages up to 740 mV and efficiencies of 2.0% are obtained.
Keywords :
Mobility , CuGaSe2 , Conductivity , solar cells
