Title of article :
Optical properties of high-quality CuGaSe2 epitaxial layers examined by piezoelectric photoacoustic spectroscopy
Author/Authors :
Yoshino، نويسنده , , Kenji and Mitani، نويسنده , , Naoji and Ikari، نويسنده , , Tetsuo and Fons، نويسنده , , Paul J and Niki، نويسنده , , Shigeru and Yamada، نويسنده , , Akimasa، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
The piezoelectric photoacoustic (PPA) signals for Cu-rich CuGaSe2 (CGS) /GaAs (0 0 1) epitaxial layer (Cu/Ga=1.09–2.16) grown by molecular beam epitaxy (MBE) were successfully obtained at liquid-nitrogen temperature. The bandgap energies of CGS (A-band) decreased and GaAs was not almost changed with increasing the Cu/Ga ratios. This phenomenon was very similar to that of free exciton (FE) by photoluminescence (PL) and the lattice parameter c by X-ray diffraction (XRD) measurements.
Keywords :
CuGaSe2 , photoacoustic , Chalcopyrite , Photoluminescence , XRD
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells
