Solar cells with Cu(In1−xGax)S2 thin films prepared by sulfurization

By rapid thermal processing of Cu/In/GaS precursors, good-quality CuIn1–xGaxS2 films are synthesized. By suppressing the formation of In-rich hillocks, we could obtain homogeneous CuIn1–xGaxS2 surfaces. A conversion efficiency of ∼12% has been achieved using a relatively low (∼1.2) Cu/In ratio.