Performance improvement of CIGS-based modules by depositing high-quality Ga-doped ZnO windows with magnetron sputtering

Improvement of the performance of Cu(InGa)Se2 (CIGS)-based thin film submodules by depositing high-quality ZnO:Ga (GZO) window layers with sputtering method is performed to aim for establishing deposition technology of GZO windows of CIGS submodules. In order to reduce damage onto CIGS absorber/Zn(O,S,OH)x buffer interface due to the bombardment of high-energy particles during DC sputtering process of GZO window layers, growth of multilayered GZO window layers is developed. By using RF/DC/DC sputtered GZO window layers instead of the conventional DC sputtered GZO window layers, fill factor (FF) and conversion efficiency are increased over 10%. Increasing short-circuit current density (Jsc) of CIGS submodules is also investigated by improving the transparency of GZO window layers. Furthermore, damp heat test of the sputtered GZO films is carried out, and it is found that the GZO films have good stability of electrical properties.