Author/Authors :
Ekins-Daukes، نويسنده , , N.J. and Barnes، نويسنده , , J.M. and Barnham، نويسنده , , K.W.J. and Connolly، نويسنده , , J.P. and Mazzer، نويسنده , , M. and Clark، نويسنده , , J.C. and Grey، نويسنده , , R. and Hill، نويسنده , , G. and Pate، نويسنده , , M.A. and Roberts، نويسنده , , J.S.، نويسنده ,
Abstract :
The state of GaAs/InGaAs quantum well solar cell research is reviewed. The effect of strain upon the GaAs/InGaAs cells is discussed and the limits to a strained GaAs/InGaAs cell established. The strain-balance approach is suggested as a means of overcoming the limits inherent to the strained approach and the principle is demonstrated in two differing device configurations. The strain-balance devices show enhanced efficiencies over their strained counterparts and in one case, comparable efficiency to a good GaAs control cell. The application of these cells to tandem structures is discussed, indicating the potential for a substantial efficiency enhancement.
