Title of article
Dark I–V–T measurements and characteristics of (n) a-Si/(p) c-Si heterojunction solar cells
Author/Authors
Hussein، نويسنده , , R and Borchert، نويسنده , , D and Grabosch، نويسنده , , G and Fahrner، نويسنده , , W.R، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
123
To page
129
Abstract
Heterojunction solar cells have been manufactured by depositing n-type a-Si:H on p-type 1–2 Ω cm Cz single-crystalline silicon substrates. An efficiency of 14.2% has been obtained for 1 cm2 solar cells by using a simple (Al/(p) c-Si/(n) a-Si:H/ITO/metal grid) structure. With an additional surface texturing, we have reached an efficiency of 15.3% for 1 cm2 solar cells. We have investigated the dark IV-curves in order to contribute to a better understanding of the basis of solar cells.
Keywords
Two-diode model , Heterojunction , Dark current
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1477512
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