Title of article
Study of Cd-free buffer layers using Inx(OH,S)y on CIGS solar cells
Author/Authors
Huang، نويسنده , , C.H. and Li، نويسنده , , Sheng S and Shafarman، نويسنده , , W.N and Chang، نويسنده , , C.-H and Lambers، نويسنده , , E.S and Rieth، نويسنده , , L and Johnson، نويسنده , , J.W. and Kim، نويسنده , , S and Stanbery، نويسنده , , B.J and Anderson، نويسنده , , T.J and Holloway، نويسنده , , P.H، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
131
To page
137
Abstract
The alternative buffer layer material Inx(OH,S)y was deposited on Cu(In,Ga)Se2 (CIGS) thin films by chemical-bath-deposition (CBD). The impurities in Inx(OH,S)y buffer layers and their atomic concentration were characterized by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) analyses. In addition, AES was used to depth profile the samples. The band-gap energy of the deposited Inx(OH,S)y was determined from optical absorption data. Both the dark- and photo-current-voltage (I–V) characteristics of the CIGS solar cells with Inx(OH,S)y buffer layers were measured, and the results were compared to the CIGS cells deposited with CBD CdS buffer layers.
Keywords
Photovoltaic , CIGS , Buffer layer , CBD , Auger , XPS , CIS , AES
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1477515
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