The electro-optical properties of amorphous indium tin oxide films prepared at room temperature by pulsed laser deposition

The electrical and optical properties of pulsed laser deposited amorphous indium tin oxide films at room temperature are discussed. The films were grown from indium oxide (In2O3) targets of different tin (Sn) doping content (0, 5 and 10 wt%) at different oxygen pressures (PO2) ranging from 1×10−3 to 5×10−2 Torr. The electrical and optical properties of the films were examined by Hall measurements and optical spectrophotometry. It was found that high conductivity amorphous films could be prepared at room temperature irrespective of the Sn doping content. The properties of these films deposited from 0, 5, 10 wt% Sn-doped In2O3 targets show a similar response to changes in PO2. The maximal conductivity of (4.0, 2.1 and 1.8)×103 S/cm and optical transmittance (visible) higher than 90% were obtained at PO2 region of (1–1.5)×10−2 Torr. An undoped In2O3 film produced the highest conductivity of 4×103 S/cm in these studies.