Photoelectrochemical studies on galvanostatically formed multiple band gap materials based on CdSe and ZnSe

The preparation of some multiple band gap semiconductor films based on CdSe and ZnSe has been carried out using galvanostatic electrochemical codeposition technique to investigate their photoelectrochemical characteristics on the basis of photoelectroconvertibility and photoaction spectral studies using I2/I3− and [Fe (CN) 6]3−/[Fe (CN) 6]4− redox couples. These composite systems show substantially improved photoelectrochemical properties compared to the constituent CdSe and ZnSe films prepared under comparable experimental conditions. These multiple band gap films were also found to exhibit enhanced resistance towards electrochemical corrosion.