Title of article :
Advances in monocrystalline Si thin film solar cells by layer transfer
Author/Authors :
Bergmann، نويسنده , , R.B and Berge، نويسنده , , C and Rinke، نويسنده , , T.J. and Schmidt، نويسنده , , J and Werner، نويسنده , , J.H، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
6
From page :
213
To page :
218
Abstract :
The transfer of monocrystalline Si films enables the fabrication of efficient thin film solar cells on glass or plastic foils. Chemical vapor deposition serves to epitaxially deposit Si on quasi-monocrystalline Si films obtained from thermal crystallization of a double-layer porous Si film on a Si wafer. A separation layer that forms during this crystallization process allows one to separate the epitaxial layer on top of the quasi-monocrystalline film from the starting Si wafer after solar cell processing. Independently confirmed thin film solar cell efficiencies are 15.4% and 16.6% for thin film solar cells transferred to a glass superstrate with a total Si film thickness of 24.5 and 46.5 μm, respectively, and a cell area of 4 cm2. Device simulations indicate an efficiency potential above 20%.
Keywords :
SI , solar cells , diffusion length , Light trapping , Device modeling
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2002
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1478171
Link To Document :
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