Title of article
Thin films of Cu(In,Ga)Se2 and ordered vacancy compound prepared by thermal crystallization and their photovoltaic applications
Author/Authors
Yamaguchi، نويسنده , , Toshiyuki and Kobata، نويسنده , , Toshitsugu and Niiyama، نويسنده , , Shigetoshi and Nakamura، نويسنده , , Takashi and Yoshida، نويسنده , , Akira، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
6
From page
87
To page
92
Abstract
Thin films of Cu–In–Ga–Se alloy system with various composition were prepared by thermal crystallization from In/CuInGaSe/In precursor. Electron probe microanalysis and X-ray diffraction study revealed that these samples were assigned to chalcopyrite Cu(In,Ga)Se2 or ordered vacancy compound Cu(In,Ga)2Se3.5. Solar cell with ZnO:Al/i–ZnO/CdS/Cu(In,Ga)Se2/Mo/soda-lime glass substrate structure was fabricated by using thermal crystallization technique, and demonstrated a 9.58% efficiency without AR-coating.
Keywords
Cu(In , solar cell , Thermal crystallization , Ga)Se2 , Ordered vacancy compound
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2003
Journal title
Solar Energy Materials and Solar Cells
Record number
1478327
Link To Document