Preparation of CuIn1−xGaxSe2 thin films by sputtering and selenization process

CuIn1−xGaxSe2 polycrystalline thin films were prepared by a two-step method. The metal precursors were deposited either sequentially or simultaneously using Cu–Ga (23 at%) alloy and In targets by DC magnetron sputtering. The Cu–In–Ga alloy precursor was deposited on glass or on Mo/glass substrates at either room temperature or 150°C. These metallic precursors were then selenized with Se pellets in a vacuum furnace. The CuIn1−xGaxSe2 films had a smooth surface morphology and a single chalcopyrite phase.