A note on the Hall mobility and carrier concentration in pyrite thin films

This note presents results on Hall effect characteristics (mobility and density of majority charge carriers) of undoped p-type and n-doped pyrite thin films. Carrier mobilities between 200 and 0.07 cm2/V s have been measured in undoped p-type films. Doped n-type films present values which vary from 200 to 0.1 cm2/V s. The corresponding carrier densities change from 2×1018 to 1022 cm−3 in p-type films and from 6×1017 to 1021 cm−3 in n-type films. These results reinforce the physical basis and conclusions of the modelling of pyrite solar cells accomplished by Altermatt et al. (Sol. Energy Mater. Sol. Cells 71 (2002) 181).