Synthesis and transport properties of prospective photovoltaic systems related to CuInSe2 and CuGaSe2

Solid solutions in CuGaSe2–ZnSe and CuInSe2–ZnSe systems have been obtained by radio frequency heating. In order to prepare n-type phases based on CuGaSe2, p-type (CuGa)1−xZn2xSe4 and (CuIn)1−xZn2xSe4 (0.05⩽x⩽0.1) single crystals were doped by Ag, Hg, Cd, Zn implantation. The crystal structure of the solid solutions was studied by X-ray diffraction; the substitutors as well as the implantant valence states were analyzed using X-ray photoelectron spectroscopy. Hall effect, electrical conductivity, and the charge carrier mobility of an n-type zinc-implantated solid solution (CuGa)1−xZn2xSe4 and (CuIn)1−xZn2xSe4 (0.05⩽x⩽0.1) were studied.