Title of article
Particles in silicon deposition discharges
Author/Authors
Gallagher، نويسنده , , Alan and Bano، نويسنده , , Gregory and Rozsa، نويسنده , , Karoly، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
14
From page
27
To page
40
Abstract
The causes of particle growth in silane discharges, and of their escape to growing devices, are discussed. The relation between particle densities, sizes, and escape to the electrodes in an experimental reactor versus those expected (versus location) in large device-production reactors are explained. Available particle growth, density, and escape data is briefly reviewed and explained. In particular, the important distinction between particles drifting with the gas flow and those trapped at the downstream edge of the plasma is clarified. The very important role of thermophoretic forces is discussed, particularly its influence on the size of particles that incorporate into devices. Methods are suggested to mitigate particle incorporation into devices, and to prevent major particle buildup at the downstream end of a reactor.
Keywords
amorphous silicon , silane , Discharge , particles
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2003
Journal title
Solar Energy Materials and Solar Cells
Record number
1478772
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