Charge transport generation-recombination mechanism in Au/n-CdZnTe diodes

Diode structures fabricated by vacuum evaporation of Au onto n-type Cd1−xZnxTe (x=0.05) single crystals (ρ=0.1–0.3 Ω cm) are investigated. The current–voltage characteristics of the diode are shown to be interpreted quantitatively in terms of the Sah–Noyce–Shockley theory for generation-recombination in the space-charge region of the diode.