Author/Authors :
Sobajima، نويسنده , , Yasushi and Mori، نويسنده , , Kunihiro and Tsukamoto، نويسنده , , Masahiro and Yoshida، نويسنده , , Norimitsu and Takahashi، نويسنده , , Masao and Kobayashi، نويسنده , , Hikaru and Nonomura، نويسنده , , Shuichi، نويسنده ,
Abstract :
Effects of cyanide (CN) treatment with hydrogenated amorphous silicon (a-Si:H) films have been investigated. The decrease of ΔV/V was observed in cyanide treated a-Si:H films and the successive thermal annealing at 200°C after CN treatment induced the further reduction of the ΔV/V. XPS spectra show the indirect evidence that the cyanide species is present within 10 nm from the hydrogenated amorphous silicon surface. The results of CN treatment with a-Si:H solar cells are demonstrated.
