Title of article :
A new technique for boosting efficiency of silicon solar cells
Author/Authors :
Li، نويسنده , , Jianming and Chong، نويسنده , , Ming and Yang، نويسنده , , Liqing and Xu، نويسنده , , Jiadong and Duan، نويسنده , , Xiao-Feng and Gao، نويسنده , , Min and Wang، نويسنده , , Feng-Lian and Liu، نويسنده , , Haitao and Bian، نويسنده , , Li and Chi، نويسنده , , Xun and Zhai، نويسنده , , Yonghui، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
7
From page :
585
To page :
591
Abstract :
A new type of photovoltaic system with higher generation power density has been studied in detail. The feature of the system is a V-shaped module (VSM) with two tilted monocrystalline solar cells. Compared to solar cells in a flat orientation, the VSM enhances external quantum efficiency and leads to an increase of 31% in power conversion efficiency. Due to the VSM technique, short-circuit current density was raised from 24.94 to 33.7 mA/cm2, but both fill factor and open-circuit voltage were approximately unchanged. For the VSM similar results (about 30% increase) were obtained for solar cells fabricated by using mono-crystalline silicon wafers with only conventional background impurities.
Keywords :
Light confinement , Silicon , solar cells , V-shaped structure
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2005
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1479674
Link To Document :
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