Title of article :
Characterization of silicon carbide thin films and their use in colour sensor
Author/Authors :
Zhang، نويسنده , , S. and Raniero، نويسنده , , L. and Fortunato، نويسنده , , E. and Liao، نويسنده , , X. and Hu، نويسنده , , Alcيnia Z. and Ferreira، نويسنده , , I. and ءguas، نويسنده , , H. and Ramos، نويسنده , , A.R. and Alves، نويسنده , , E. and Martins، نويسنده , , R.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
6
From page :
343
To page :
348
Abstract :
A series of hydrogenated amorphous silicon carbide (a-Si1−xCx:H) films were prepared by plasma-enhanced chemical vapour deposition (PECVD) using a gas mixture of silane, methane, and hydrogen as the reactive source. The previous results show that a high excitation frequency, together with a high hydrogen dilution ratio of the reactive gases, allow an easier incorporation of the carbon atoms into the silicon-rich a-Si1−xCx:H film, widen the valence controllability. The data show that films with optical gaps ranging from about 1.9 to 3.6 eV could be produced. In this work the influence of the hydrogen dilution ratio of the reactive gases on the a-Si1−xCx:H film properties was investigated. The microstuctural and photoelectronic properties of the silicon carbide films were characterized by Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), and FT-IR spectrometry. The results show that a higher hydrogen dilution ratio enhances the incorporation of silicon atoms in the amorphous carbon matrix for carbon-rich a-Si1−xCx:H films. One pin structure was prepared by using the a-Si1−xCx:H film as the intrinsic layer. The light spectral response shows that this structure fits the requirement for the top junction of colour sensor.
Keywords :
Thin film materials & , devices , Thin film , silicon carbide , Sensor
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2005
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1479758
Link To Document :
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