Author/Authors :
Ishizuka، نويسنده , , S. and Sakurai، نويسنده , , K. and Yamada، نويسنده , , A. and Matsubara، نويسنده , , K. and Fons، نويسنده , , P. and Iwata، نويسنده , , K. and Nakamura، نويسنده , , S. and Kimura، نويسنده , , Y. and Baba، نويسنده , , T. and Nakanishi، نويسنده , , H. and Kojima، نويسنده , , T. and Niki، نويسنده , , S.، نويسنده ,
Abstract :
The correlation of the cell performance of wide-gap Cu(In1−xGax)Se2 (CIGS) solar cells with the thickness of highly resistive i-ZnO layers, which are commonly introduced between the buffer layer and the transparent conductive oxide (TCO) layer in CIGS solar cell devices, was studied. It was found that cell parameters, in particular, the fill factor (F.F.) varied with the thickness of the i-ZnO layers and the variation of the F.F. was directly related to cell efficiency. A 16%-efficiency was achieved without use of an anti-reflection coating from wide-gap (Eg∼1.3 eV) CIGS solar cells by adjusting the deposition conditions of the i-ZnO layers.
Keywords :
ZNO , Wide-gap CIGS , solar cells , Cu(In , Ga)Se2 , i-ZnO layer thickness
