Title of article :
Fluctuation model for p–n heterojunction solar cells
Author/Authors :
Dmitruk، نويسنده , , N.L and Borkovskaya، نويسنده , , O.Yu. and Mamontova، نويسنده , , I.B. and Basiuk، نويسنده , , E.V. and Saniger Blesa، نويسنده , , J.M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
Influence of the roughness (microrelief) of an active interface in p–n junction solar cells (SC) on the photovoltage (the open-circuit voltage Voc) has been studied. Nonuniformity of contact potential difference between p- and n-regions leads to barrier height fluctuation that are exponentially enhanced when dealing with barrier current. This results in some decrease of the Voc value. Three theoretical models of averaging open-circuit voltage were used. Experimental results on p+-AlxGa1−xAs/p+-n-GaAs heterostructure SC with various microrelief, obtained by the anisotropic chemical etching, are compared with theoretical calculations.
Keywords :
Heterojunction solar cells , Fluctuation model , Microrelief interface , Anisotropic etching
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells