Title of article
Efficiency limits for single-junction and tandem solar cells
Author/Authors
Meillaud، نويسنده , , Peter F. and Shah، نويسنده , , A. and Droz، نويسنده , , C. and Vallat-Sauvain، نويسنده , , E. and Miazza، نويسنده , , C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
8
From page
2952
To page
2959
Abstract
Basic limitations of single-junction and tandem p–n and p–i–n diodes are established from thermodynamical considerations on radiative recombination and semi-empirical considerations on the classical diode equations. These limits are compared to actual values of short-circuit current, open-circuit voltage, fill factor and efficiency for amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon solar cells. For single-junction cells, major efficiency gains should be achievable by increasing the short-circuit current density by better light trapping. The limitations of p–i–n junctions are estimated from recombination effects in the intrinsic layer. The efficiency of double-junction cells is presented as a function of the energy gap of top and bottom cells, confirming the ‘micromorph’ tandem (a-Si:H/μc-Si:H) as an optimum combination of tandem solar cells.
Keywords
Tandem solar cells , Efficiency limits , Amorphous and microcrystalline silicon , Single p–n and p–i–n junction solar cells
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2006
Journal title
Solar Energy Materials and Solar Cells
Record number
1480743
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