Title of article
Structural changes of CIGS during deposition investigated by spectroscopic light scattering: A study on Ga concentration and Se pressure
Author/Authors
Sakurai، نويسنده , , K. and Scheer، نويسنده , , R. and Nakamura، نويسنده , , S. and Kimura، نويسنده , , Y. and Baba، نويسنده , , T. and Kaufmann، نويسنده , , C.A. and Neisser، نويسنده , , A. and Ishizuka، نويسنده , , S. Narita-Yamada، نويسنده , , A. and Matsubara، نويسنده , , K. and Iwata، نويسنده , , K. and Fons، نويسنده , , P. and Nakanishi، نويسنده , , H. and Niki، نويسنده , , S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
8
From page
3377
To page
3384
Abstract
We have studied the three-stage deposition process of CuIn1−xGaxSe2 (CIGS) thin films using spectroscopic light scattering (SLS), under varied deposition conditions. The structural changes of CIGS films by (1) Ga composition, (2) Se supply and (3) low deposition temperature, were observed in situ by SLS. The largest changes in SLS profiles by the Ga composition was observed between x = 0.3 and 0.5. The SLS profiles changed significantly during stage 1 by varying the Se pressure, while the temperature profiles did not.
Keywords
solar cell , Light Scattering , SLS , CIGS , Three stage
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2006
Journal title
Solar Energy Materials and Solar Cells
Record number
1480879
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