Title of article
Characterisation of micrometre-sized inversion layer emitters in crystalline Si
Author/Authors
Wu، نويسنده , , Johnny E. and Aberle، نويسنده , , Armin G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
7
From page
3471
To page
3477
Abstract
The electrical properties of micrometre-sized inversion-layer (IL) emitters in crystalline Si are investigated by measuring their current–voltage characteristics using a so-called NOSFET device. The IL emitter is induced by a SiN/SiO double-layer stack. We show that by scanning the surface with a negatively biased tip, the IL emitter below the tip can be controllably eliminated.
Keywords
Inversion-layer emitter , Crystalline silicon , solar cells , NOSFET , SiN/SiO double-layer stack
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2006
Journal title
Solar Energy Materials and Solar Cells
Record number
1480908
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