Title of article :
CuInTe2 and In-rich telluride chalcopyrites thin films obtained by electrodeposition techniques
Author/Authors :
Orts، نويسنده , , J.L. and Dيaz، نويسنده , , R. and Herrasti، نويسنده , , P. and Rueda، نويسنده , , F. and Fatلs، نويسنده , , E.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Abstract :
In order to obtain single-phase thin films of the system Cu–In–Te with optoelectronic properties adequate for solar cells, electrodeposition techniques were used on substrates of molybdenum supported by glass. Different annealings in Te atmosphere have been done that affect the Te concentration and In/Cu atomic ratio. Single chalcopyrite phase appears in two ranges of composition where the In/Cu atomic ratio varies between 0.21–0.76 and 0.90–3.46, respectively. Morphology, cell lattice parameters and electrical resistance for single-phase samples depend strongly on the composition in the annealed samples. The cell parameters ranges are a=6.141–6.183 Å and c=12.201–12.375 Å.
Keywords :
Thin films , Te chalcopyrite materials , In-rich , Electrodeposition , Structural properties
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells