Amorphous silicon films with high deposition rate prepared using argon and hydrogen diluted silane for stable solar cells

Hydrogenated amorphous silicon films with high deposition rate (4–5 Å/s) and reduced Staebler–Wronski effect are prepared using a mixture of silane (SiH4), hydrogen and argon. The films show an improvement in short and medium range order. The structural, transport and stability studies on the films are done using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman scattering studies, electrical conductivity and diffusion length measurement. Presence of both atomic hydrogen and Ar* in the plasma causes breaking of weak SiSi bonds and subsequent reconstruction of strong bonds resulting in improvement of short and medium range order. The improved structural order enhances the stability of these films against light soaking. High deposition rate is due to the lesser etching of growing surface compared to the case of only hydrogen diluted silane.